| PART |
Description |
Maker |
| RJK0655DPB RJK0655DPB-00-J5 RJK0655DPB-15 |
60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching
60V, 35A, 6.7m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| FAN1086D-2.85 FAN1086S-3.3 FAN1086S-2.5 FAN1086M-2 |
Neuron ICs; Max. Input Clock: 20 MHz; EEPROM: 2 KB; RAM: 2 KB; ROM: 16 KB; Package: 32 pin SOP; External Memory I/F: No
; Sensitivity dBµmV: 93 ~ 107; Package: SSOP16; Production Status: MP
FETs Nch 30VFETs Nch 30VPhase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP
FETs Nch 30VFETs Nch 30VFETs Nch 30VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (Ω): (max 0.018) (max 0.013) (max 0.012); I_S (A): (max 6)
FETs Nch 30VFETs Nch 30VFETs Nch 30VFETs Nch 30VTHREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS
积极的固定电压稳压器
FETs Nch 30V<VDSS=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45)
FETs Nch 30V<VDSS=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)
|
|
| FDD5810 |
N-Channel PowerTrench? MOSFET 60V, 35A, 27mOhm
N-Channel PowerTrench㈢ MOSFET 60V, 35A, 27mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| ENA1755 |
P-Channel Power MOSFET, -60V, -35A, 29.5mOhm, Single ATPAK
|
ON Semiconductor
|
| 35SCGJQ060 |
35A 60V Hi-Rel Schottky Common Cathode Diode in a D2-Pak package
|
International Rectifier
|
| 2SJ215 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-247VAR 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 35A条（丁）|47VAR
|
Cypress Semiconductor, Corp.
|
| RJK0651DPB RJK0651DPB-00-J5 RJK0651DPB-13 |
60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| BC445 BC445A |
V(ceo): 60V; V(cbo): 60V; V(ebo): 5V; voltage NPN silicon transistor
|
Motorola
|
| RJK03E9DPA RJK03E9DPA-00-J5A |
30V, 35A, 4.3m max N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STB3NA80 4229 STB3NA80T4 |
Resettable Fuse; Series:1210L; Thermistor Type:PTC; Operating Voltage Max:6VDC; Holding Current:0.35A; Tripping Current:0.7A; External Depth:0.85mm; Length:3.43mm; Initial Resistance Min:0.32ohm; Initial Resistance Max:1.3ohm RoHS Compliant: Yes
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| BP35-06G BP35-08G BP35-005G BP35-01G BP35-02G BP35 |
35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| RJK0629DPE RJK0629DPE-15 |
60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
